发明名称 GAAS FET CIRCUIT
摘要 PURPOSE:To obtain excellent high frequency characteristics and balancing characteristics by inserting a resistor to correct the loss of a high-frequency current flowing to a source of an FET whose source is connected with a source of other FET. CONSTITUTION:An unbalanced high frequency signal is fed between an input terminal 5 and ground and an inverted signal is outputted at an output terminal 6 by a GaAs FET46 formed on a wafer. On the other hand, a signal inverting a terminal 6 is outputted to an output terminal 7. To correct the loss of a high- frequency current flowing to a source of a GaAs FET47, a resistor 22 is inserted between the gate of the FET46 and a drain of the FET48 in this circuit. The presence of the resistor allows the input high frequency signal fed to the terminal 5 to be fed to the gate of the FET46 and also a correcting voltage is fed also to the source of the FET47 through the resistor 22, a high-frequency current flowing to the FET47 is increased thereby making the level at the terminals 6 and 7 identical.
申请公布号 JPS6096907(A) 申请公布日期 1985.05.30
申请号 JP19830204460 申请日期 1983.10.31
申请人 NIPPON DENKI KK 发明人 KUSAMA NOBORU
分类号 H03F3/193;H03F1/32;H03F3/45 主分类号 H03F3/193
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