发明名称 AL WIRE FOR BONDING SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To obtain an Al small-gage wire having excellent bonding properties by selecting the kinds and quantity of addition of elements to be added to Al having high purity. CONSTITUTION:0.5-2.0wt% Mg is added to Al having not less than 99.9% purity, and one kind or two kinds or more of elements of 0.01-0.4wt% Cu, 0.01- 1.0wt% Ag and 0.05-0.2wt% Au are further added by 0.01-1.0wt% in total. When the Al alloy is melted and casted, wire-drawn to form a small-gage wire having a 0.02-0.5mm.phi diameter and thermally treated (350 deg.C and 30min), an Al small-gage wire obtained has proper tensile strength and adhesive strength, and also has excellent dampproofness and uniform quality.
申请公布号 JPS6095955(A) 申请公布日期 1985.05.29
申请号 JP19830203880 申请日期 1983.10.31
申请人 TANAKA DENSHI KOGYO KK 发明人 HAYASHI SHIYOUZOU;SHIRAKAWA SHINJI
分类号 H01L21/60;H01L23/49 主分类号 H01L21/60
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