| 摘要 |
PURPOSE:To obtain an Al small-gage wire for joining a semiconductor element by the addition of small amounts of two kinds of selected elements by the synergism of the addition by adding the elements to Al having high purity. CONSTITUTION:0.2-1wt% Si and 0.2-1.5wt% Mg are added to Al having not less than 99.9% purity, and both contents are kept within a range of 0.4- 2.5wt%. The alloy is dissolved and casted, and wire-drawn, and an Al wire for joining, a wire diameter extends over 0.02-0.07mm.phi, is manufactured, and thermally treated (350 deg.C and 30min). The Al wire obtained displays tensile strength and hardness proper to joining. |
