| 摘要 |
PURPOSE:To prevent any crystalline defect from happening in a nitrogen-doped n<-> grown layer by a method wherein nitrogen and neutral impurity with larger atomic radius than that of nitrogen having no influence upon impurity concentration is added to an n<->GaP grown layer. CONSTITUTION:A boat comprising a member containing a GaP substrates 12 and GaP solution 17 is mounted in a main furnace. Firstly after heating the main furnace up to specified temperature, a Ga.GaP solution reservoir 18 is shifted in the arrow B direction to drain Ga.GaP solution containing Si and Al in a member 11 forming an n<+> grown layer doped with Si and Al on the substrate 12. Secondly when a reactor is filled with Ar+NH3 gas, an n<-> grown layer with N in the form of GaN added thereto is formed on the N<+> grown layer. At this time, Al with larger atomic radius than that of N is trapped in a distorted crystal part due to smaller atomic radius of N than that of P to prevent any crystalline defect from happening. Successively p<+> grown layer may be continuously formed on the n<+> grown layer. |
