| 摘要 |
PURPOSE:To obtain multilayer wiring structure having large capacitance per a unit area only among desired wirings by previously forming a thick section and a thin section to an insulating coating when an insulating film is applied on the surface of a semiconductor substrate, a plurality of first wiring layers are formed on the insulating film at intervals and a second wiring layer is formed on these first wiring layers through the insulating coating. CONSTITUTION:An SiO2 film 2 is applied on the surface of a semiconductor substrate 1, first layer wirings 3 and 4 having low resistance consisting of Al, etc. are shaped on the film 2 at a regular interval, and the whole surface is coated with an Si3N4 film 7 as a first layer insulating coating. A second layer Si3N4 film 8 is applied extending over the upper section of the wiring 4 from the upper section of the film 2 exposed between the wirings 3 and 4, and the thickness of the Si3N4 films is made previously thicker than that of the films on the wiring 3 on these regions. A second layer Al wiring 6 is applied on the whole surface, and an opening 9 is bored to a crossing region between the Si3N4 film 7 and 8 and the wirings 3 and 6 are connected. Accordingly, multilayer wiring structure having a large capacitance value is obtained in the crossing region. |
