| 摘要 |
<p>PURPOSE:To obtain high production speed by sputtering metallic Cr on a glass base in an atm. of Ar and Xe mixture to form a Cr film, and subjecting it to dry etching through a patterned photoresist to form a photomask. CONSTITUTION:A metallic Cr film 11 is formed on a glass base 10 by sputtering metallic Cr. This film 11 is coated with a photoresist 12 and after patterning the resist 12, it is subjected to dry etching to form a photomask. In this process, sputtering of the metallic Cr is carried out in an atm. of an Ar and Xe mixture. The metallic Cr film 11 obtained by such sputtering is enhanced in etching speed, and accordingly, the formation speed of the photomask can be enhanced.</p> |
