| 摘要 |
PURPOSE:To provide a photoconductive member having high photosensitivity and a high S/N ratio and maintaining satisfactory electrical contact between its photoconductive layer and support by forming a photoconductive layer contg. the 1st layered region made of an amorphous material contg. Si and Ge atoms so that the Ge atoms are ununiformly distributed in the thickness direction and by incorporating a conductivity controlling substance and C atoms into the photoconductive layer. CONSTITUTION:The 1st layer 102 has a laminated structure formed by successively laminating the 1st layered region 104 made of a-Si(H,X) contg. Ge atoms and the 2nd photoconductive layered region 105 made of a-Si(H,X) on a support 101. The Ge atoms are continuously contained in the region 104 in the thickness direction so that more Ge atoms are distributed on the support 101 side. The region 104 contains a conductivity controlling substance so as to give desired conductivity to the region 104. The 1st layer 102 contains C atoms so as to increase the photosensitivity and dark resistance and to improve the adhesive strength between the support 101 and the 1st layer 102. |
