| 摘要 |
PURPOSE:To stabilize the operation by inserting an element separating and field shielding laminate between a single crystal semiconductor substrate and the first, second and third single crystal semiconductor regions. CONSTITUTION:Oxygen ions are implanted into a single crystal semiconductor substrate to form a polycrystalline silicon which includes oxygen as a field shielding semi-insulating film 22 under a thin surface single crystal layer, an insulating layer of SiO2 is formed as an element separating insulating layer 21, thereby forming a single crystal semiconductor substrate 1 and an element separating field shielding laminate 23. Then, semiconductor regions 2-5 are formed on a single crystal layer, and an element separating insulating film 24 is formed before and after the regions. Then, an insulating film 11 is formed, and a drain electrode 12, a source electrode 13 and a gate electrode 14 are fored on the regions 3, 4 and 5, respectively through windows 8, 9, 10. Thus, even if the potential of the substrate 1 is varied to positive voltage with respect to the region 2, the operation can be stably obtained in the desired characteristics. |
