| 摘要 |
A semiconductor device is manufactured by providing a layer of barrier metal on a restricted surface region of a body of semiconductor material while leaving other regions of the surface exposed, providing a layer of insulating material over the exposed regions of the body of semiconductor material and over a peripheral region of the layer of barrier metal while leaving a central region of the layer of barrier metal exposed through an aperture in the layer of insulating material, and establishing ohmic connection to the central region of the layer of barrier metal by way of the aperture in the layer of insulating material. Preferably, the restricted surface region of the body of semiconductor material is the top surface of a mesa formed by selective etching of the semiconductor material using the barrier metal as a mask. |
