发明名称 PHOTOMASK
摘要 PURPOSE:To provide a photomask provided with a chromium oxynitride layer as a barrier layer for preventing migration of an impurity, particularly sodium element, etc. from a glass base. CONSTITUTION:A barrier layer 2 is formed on a glass base 1 and further a metallic chromium layer 3 is disposed thereon. The ratio of the respective elements Cr:O:N of the chromium oxynitride film as the layer 2 is preferably in a 45-50:30-50:5-20 range and can be controlled by changing the partial pressure of the respective gases of oxygen and nitrogen to be introduced into a thin film forming device or changing the flow rate of oxygen and nitrogen under the specified partial pressure. The thickness enough to prevent migration of sodium as the barrier layer is adequately in a 50-250Angstrom range.
申请公布号 JPS6093438(A) 申请公布日期 1985.05.25
申请号 JP19830201808 申请日期 1983.10.27
申请人 KONISHIROKU SHASHIN KOGYO KK 发明人 ISHIKAWA MITSURU;MATSUMURA SHIGEKI
分类号 G03F1/00;G03F1/58;G03F1/88;H01L21/027 主分类号 G03F1/00
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