| 摘要 |
PURPOSE:To enhance dry etching resistance by incorporting a specified polymer obtained by modifying at least a small part of hydroxy groups of p-hydroxy-alpha- methyl-styrene polymer to aromatic sulfonic acid ester groups. CONSTITUTION:A resist compsn. contains a polymer obtained by modifying at least a small part of hydroxy groups of p-hydroxy-alpha-methylstyrene polymer to aromatic sulfonic acid ester groups represented by formula I in which R is an org. groups of formula II, and m/(m+n) is, preferably, in the range of 0.5-1.0. As a result, a resist compsn. good in dry etching resistance can be obtained without impairing resolution, transmittance, and contrast. |
