| 摘要 |
PURPOSE:To equalize the distribution of temperature in a region to be irradiated, and to facilitate the growth of a crystal layer by adding an optical beam projection system projecting optical beams to a region containing the projecting point of electron beams. CONSTITUTION:An electron beam annealing device proper consists of an electron gun 1, a lens 2, a deflector 5, etc., and electron beams are focussed by the electron lens 2, and projected onto a wafer (a sample to be annealed) 4 placed on a table 3. An optical beam projection system composed of a halogen lamp light source 6 and a concave reflecting mirror 7 is arranged in a sample chamber, and projects optical beams to a region slightly wider than an electron-beam projecting region from the oblique direction. Accordingly, a temperature difference between the electron-beam projecting region and the periphery of the region is reduced, thermal diffusion is minimized, and distribution in which a temperature is made constant within the swing width of electron beams and the equality in the distribution of heat is extremely excellent is obtained. |
