| 摘要 |
PURPOSE:To prevent pellet cracking and peeling off from happening without deteriorating the radiation effect by PHS by a method wherein unit transistors are respectively formed on multiple substrates connected to radiating alloy layers with common backside to be separately arranged perfectly. CONSTITUTION:When two FETs are loaded on a GaAs substrate 2, the GaAs substrates 2 on PHS4 are separated between unit FETs. Therefore the mechanical stress on the GaAs substrates 2 due to the difference in the thermal expansion coefficient between the GaAs substrates 2 and the alloy for PHS4 may be dispersed while the GaAs substrate 2 and the alloy for PHS4 may be hardly peeled off regardless of a bit of dispersion in the junction strength between the two materials. When the members of FETs to be loaded on the GaAs substrates 2 exceed two, the junction points between the unit FETs may be determined as necessary to prevent pellet cracking and peeling off from happening. |
