| 摘要 |
PURPOSE:To improve the heat radiation of the titled device and to lessen the stress accompanied with the generation of heat by a method wherein any one of two kinds of alloys made by making Cu contain uniformly in each of W and Mo whose thermal expansion coefficients are both in a specific extent, or an alloy made by making Cu contain uniformly in an alloy of the W and the Mo, is used as a material for the submount. CONSTITUTION:As a material for the submount of a semiconductor laser, wherein a semiconductor laser element 1 formed with GaAs, Gap or GaSb as the substrate has been used, is used any one of an alloy made by making Cu contain uniformly in W whose thermal expansion coefficient is in an extent of 5.0-8.5X10<-6>cm/cm. deg.C; an alloy made by making Cu contain uniformly in Mo, whose thermal expansion coefficient is also in the above-mentioned extent as well; or an alloy made by making Cu contain uniformly in an alloy of the W and the Mo. These alloys can be manufactured by a powder method or a solution-dipping method. When the thermal expansion coefficient of the material for the submount exceeds the above-mentioned extent of thermal expansion coefficient, the mismatching of the thermal expansion coefficient of the material and that of the semiconductor laser element 1 is increased. As a result, failure of the element or lowering of the luminous efficiency, etc., are caused due to stress, which generates in the element. |
