| 摘要 |
PURPOSE:To produce the titled senser with high reliability forming a cavity under a cantilever part in a short time without restricting applicable semiconductor substrate by a method wherein a cavity is formed under a cantilever part by means of oxidizing and etching porous silicon. CONSTITUTION:A silicon nitride film 11 is formed on a P type single crystal silicon substrate 10 and a porous silicon layer 12 is further formed from the surface of the substrate 10 to inside of the same. After removing the silicon nitride film 11, a P type single crystal silicon 13 is epitaxially grown on the surface of said substrate 10 exposing a part of the porous silicon layer 12 by etching a part of the P type silicon layer 13. Next the surface of the P type silicon layer 13 and the porous silicon layer 12 are oxidized by a high pressure oxidizing furnace into a silicon dioxide 14 and then the silicon dioxide film 14 on the surface of the P type silicon layer 13 is removed and N type inpurity is diffused to form a diffusion resistance region 15. Finally the silicon dioxide is removed to form a cavity under a cantilever part. Besides, the diffusion resistance region 15 is connected to an electrode 17. |
