| 摘要 |
PURPOSE:To enable to surely perform the control of each forward voltage (VF) of Schottky barrier diodes (SBD) and to largely obtain the difference among the VF of the SBDs by a method wherein the difference among the VF is set in such a way as to have a larger value than a value, which is decided by the junction area dependence and the electrode material dependence. CONSTITUTION:Plural piece of SBDs, whose VF are respectively different from each other, are provided on the same semiconductor substrate and the difference among the VF is set in such a way as to have a larger value than a value, which is decided by the junction area dependence and the electrode material dependence. As one of such semiconductor device manufacturing methods as abovementioned, is a method, wherein a metal in such a quality that the VF of the SBDs are changed by performing a thermal treatment on the SBDs or a combination of such a metal is selected and the SBDs are formed in the semiconductor substrate and the VF are made to change by performing a selective heating on the SBDs. For example, the SBDs are formed in order by adhering Ti of 50-200Angstrom and Al of 1mum on an N type 0.5OMEGAcm long Si, which is used as the substrate, then the VF are increased by performing a heating at 450 deg.C and the heating time is decided in such a way that the values of the VF become respectively the anticipated value. |
