| 摘要 |
PURPOSE:To realize the titled laser; which has a secure current constricting effect, can be easily manufactured and has an excellent reproducibility; by a method wherein an active layer is provided and second conductive-type semiconductor layers having a larger forbidden band width than that of the active layer are provided on the sides of a third semiconductor layer and a fourth semiconductor layer. CONSTITUTION:In the first liquid-phase growing process, a p type Al0.5Ga0.5As layer 12, which is larger in a composition ratio of Al, is laminated on an active layer 3. After that, necks 13 made narrower than the mesa width are formed by an etching process. The necks 13 become current narrowering layers in such a way as to surround the mesa part by the second crystal growth process. Buried layers are successively formed. A p type Al0.35Ga0.65As buried layer 6 can be stopped its growth at the neck parts 13 without fail without growing at the upper part than the necks 13. Moreover, the growing layer thickness is controlled and by curving the surface of the buried layer 6, a buried layer 14, which is formed following that, can be also stopped the growth at the neck parts 13. Accordingly, the buried layer 14 can be selectively formed only on the buried layer 6. As a result, buried layers, which are formed following that, can be easily buried. |
