| 摘要 |
PURPOSE:To improve damp-proofness by forming an organic group film on the uppermost surface of a semiconductor substrate containing active and inactive regions and implanting ions onto the organic group film and an exposed metallic bonding pad in the high quantity of dosage. CONSTITUTION:A field insulating film 2, an aluminum electrode 3 as a bonding pad electrode and a metallic wiring layer 4 are formed on a semiconductor substrate 1, sections except the aluminum electrode 3 are coated with an insulating film 5, an organic group film 6 consisting of a photoresist film is shaped, and ions are implanted to the whole surface in the high quantity of dosage. The organic group film 6 is cured, an external flaw and damp-proofness are improved, and the progress of the corrosion of aluminum under the conditions of high temperature and humidity is retarded in the aluminum electrode when ions are implanted to an aluminum surface. B, As, N, Ar, etc. are used as ion sources for ion implantation in the high quantity of dosage. |
