| 摘要 |
PURPOSE:To accomplish a CIGF constitution using only one laminated body by a method wherein, in the laminated type complementary insulated gate type semiconductor device (CIGF) of longitudinal channel type, the mounting of one conductive electrode of the laminated body is formed in common manner. CONSTITUTION:A conductive film 2, the first non-single crystal semiconductors 3 and 3' of P and N type, the second semiconductor or insulating material 4, an N type semiconductor 5', the third semiconductor 5, the second conductor 6, and a silicon oxide film 7 are formed on a substrate 1, and laminated bodies 50 and 50' are formed by performing a selective etching. The fourth semiconductor 35 of non-single crystal constituting a channel forming region is laminated covering blocks 10 and 10', and a silicon nitride film 34 is formed. The second conductive film 30 is formed, an aniotropic etching is performed, and the residues located on the side circumference of the laminated bodies 50 and 50' are used as electrodes 40-43. The block 10' constitutes an inverter, and the block 10 constitutes a switch. In the block 10', the gates 40 and 41 are made common, and they are connected to an input 61 by passing through along the side circumference of the laminated body 50'. |
