| 摘要 |
PURPOSE:To form an impurity ion implantation layer selectively to a wafer made of Ge, GeAs, etc., and to eliminate the point at issue regarding the removal of a resist by implanting ions to the whole surface of the semiconductor wafer and removing an unnecessary section through a photoetching method. CONSTITUTION:Arsenic ions are implanted 12 to the whole surface of a Ge single crystal wafer 10, Ge in an opening section 13 is etched while using a photoresist film pattern 11 as a mask, and the resist 11 is removed by a peeling liquid. The resist 11 is removed completely because it is not exposed to ion beams. Boron is implanted 15, a resist 14 is removed, and a CVD SiO2 film 16 and an electrode 17 are formed through heat treatment. Since O2 plasma is not used for removing the resist, there is no contamination in charge shape on the surface of the wafer and no deterioration of the state of a crystal, dark currents are reduced, and the rate of increase of dark currents to the increase of backward voltage is also minimized extremely. |
