| 摘要 |
PURPOSE:To improve the wiring yield by a method wherein an organic compound soluble inorganic solvent is selected to be coated with a metallic layer by rotary coating process and the coated film is decomposed by thermal energy or photoenergy to form a thin film. CONSTITUTION:A diffusion layer 2 is formed in P type Si substrate 1 and an SiO2 film 3 is formed on the layer 2 while wafers 16 with connecting holes 4 are provided. Ethyl alcohol solution of tungsten hexachloride is dripped on the substrate 1 to be turned. Firstly the substrate 1 is left on a hot plate to evaporate the alcohol. Secondly the substrate 1 is placed in a vacuum chamber 6 filled wit H2 and the substrate 1 is vertically irradiated by CO2 laser under specified pressure of H2 decomposing WCl6 and producing HCl to form a W film 5. Thirdly an Al film 7 is forned by sputtering process. Successively a resist wiring pattern is formed by photolithography while the Al film 7 and the W film 5 may be etched for wiring utilizing the resist wiring pattern as a mask. |
