| 摘要 |
PURPOSE:To obtain a photoconductive film, a composition thereof hardly varies and which has excellent dark current and withstanding voltage characteristics, by using a substance, in which ZnSe and CdSe are mixed, melted and solidified at a predetermined ratio, as an evaporating source and forming a film mainly comprising Zn1-xCdxSe (0<x<1) when said ZnCdSe film is applied on a substrate, the film is coated with the photoconductive film and a solid-state image pickup device is manufactured. CONSTITUTION:An n<+> type region 11 as a diode region and an n<-> type region 12 as a charge transfer means are each diffused and formed to a p type Si substrate 10, an insulating layer 14 extending up to the end section of the region 11 is shaped on the region 12, and a gate electrode 15 consisting of polycrystalline Si is formed on the insulating layer 14. The whole surface is coated with a PSG film 16, an opening is bored made to correspond to the region 11, an electrode 17 being in contact with the region 11 is extended and applied on the film 16, and an opening 22 for isolating the whole at every picture element is used. A film 18 mainly comprising Zn1-xCdxSe (0<x<1) is applied on the whole surface by using a solid evaporating source consisting of ZnSe and CdSe, and the film 18 is coated with a transparent electrode 20 through a ZnSe buffer layer 19. |
