| 摘要 |
PURPOSE:To grow a thin film with excellent crystalloid and the least pollution by a method wherein the energy of cluster ion beams irradiating the surface of a substrate is limited to specified range. CONSTITUTION:When Si is used, Si cluster formed by heating in a crucible 1 is ionized by an ionizing electrons 7 and accelerated by negative voltage impressed by an accelerating electrode 4 to be cluster.ion.beams 8. These beams 8 are selected for the cluster.ion only with energy limited to specified range by a mass separator 9 to irradiate a substrate 6. Through these procedures, an Si thin film with excellent crystalloid and the least pollution may be grown. |
