| 摘要 |
PURPOSE:To enable to control the film properties of an oxide film by a method wherein a plasma vapor growth is performed while bias voltage is being impressed on a sample or the sample holder. CONSTITUTION:Bias voltage is impressed 28 on a sample stand 26, SiH4, O2 and Ar are introduced 23 in a reaction chamber 21, high-frequency power 25 is supplied to an electrode 24, and SiO2 is deposited on a sample 17. According to this constitution, the depositing conditions of the SiO2 film can be controlled by changing the bias voltage, separatedly from impressed power for discharge plasma generation. Accordingly, the film properties of the SiO2 film can be controlled. For example, an SiO2 film, whose etching speed by hydrofluoric acid is smaller and whose coating at a step difference is also favorable, compared to an SiO2 film formed without impressing bias voltage, can be formed. |
