| 摘要 |
PURPOSE:To obtain a signal light source, which can be operated at high speed, easily by forming a field-effect type transistor function section laminated on a semiconductor laser element section. CONSTITUTION:A reverse conduction type layer is utilized as a gate layer 6 for a field-effect type transistor by interposing the reverse conduction type layer between a first cap layer 5 and a second cap layer 7 constituting a semiconductor laser element. The cap layers are etched obliquely at the same time to form an inclined plane, and a gate insulating film 8 and a gate electrode 11 are attached to the gate layer 6. Accordingly, electrical loss in a connecting section is reduced, and a signal light source, which can be operated at high speed, can be obtained easily. |
