| 摘要 |
PURPOSE:To improve the crystalloid on the surface side by a method wherein an amorphour layer is recrystallized by heattreatment and then ion is implanted therein while the region near the surface of a semiconductor film is made amorphous to be recrystalized heattreatment. CONSTITUTION:The crystal defect in the surface region of a vapor grown film 2' may be reduced by means of forming a thermal oxide film 3 on the surface of the single crystal Si vopor grown film 2. Next after forming an amorphous layer 4 on the interfacial side by Si ion-implanting process, recrystallized P-layer 5 is formed by solid epitaxial growing process utilizing a grown film 2' with crystalline defect on the surface region reduced by heattreatment as a seed crystal to improve the crystalloid on the interfacial side. Furthermore, the crystalloid on the surface side may be further improved by means of forming an amorphous P- layer 6 onthe surface side by Si ion-implanting process and then growing another recrystallized P-layer 7 by solid epitaxially growing the amorphous P-layer 6 utilizing the recrystallized P-layer 5 as a seed crystal. |
