| 摘要 |
PURPOSE:To diffuse an impurity on the surface of a substrate by elevating the temp. of a compd. semiconductor substrate in a furnace, and introducing the vapor of an activated impurity element combined with hydrocarbon along with an ambient gas. CONSTITUTION:A GaAs substrate 13 is placed on a graphite susceptor 11a, and inserted into a diffusion furnace 11. After the atmosphere in the furnace is replaced with an inert gas, hydrogen is supplied from an introducing port 14. After the susceptor 11a is heated to about 500 deg.C by impressing a high-frequency power to a coil 12, AsH3 is supplied from a vessel 15 through a mass flowmeter 18. When the temp. of the susceptor 11a is further increased to a specified diffusion temp., H2 is supplied into a bubbler 16 to vaporize Zn(C2H5)2 17 which is supplied into the diffusion furnace 11. The Zn can be easily diffused on the surface of the GaAs substrate 13 in this way. |
