发明名称 |
First-in-first-out memory system. |
摘要 |
<p>High speed M-stack fall-through FIFO memory systems (40;60:80) are disclosed which reduce fall-through delay and which permit at least a doubling of the maximum shift rates at input and output ports. Input port data may be entered in one of M physical memory locations and output port data may be read from one of M physical memory locations. </p> |
申请公布号 |
EP0142263(A2) |
申请公布日期 |
1985.05.22 |
申请号 |
EP19840306913 |
申请日期 |
1984.10.10 |
申请人 |
MONOLITHIC MEMORIES, INC. |
发明人 |
HOBERMAN, BARRY A. |
分类号 |
G06F5/06;G06F5/16;G11C7/00 |
主分类号 |
G06F5/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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