| 摘要 |
<p>PURPOSE:To make easily the whole of a band into a single crystal by previously insulating and separating a silicon film on a substrate into a band with an amorphous insulating material, and annealing said film with a beam while always keeping the silicon film within the radius of the beam. CONSTITUTION:A silicon dioxide film 3 is formed on a single crystal silicon substrate 4, and a seed crystal region 1 is formed by partterning the silicon dioxide film 3. Then after a polycrystal silicon film 2 is deposited on the film 3, the polycrystal silicon film 2 is patterned into the shape of a band and a silicon dioxide film 5 having almost the same thickness as the polycrystal silicon film 2 is deposted. Then the silicon dioxide film 5 on the polycrystal film 2 is removed. In this way, the polycrystal silicon film 2 is made into a flat band insulated and separated by the silicon dioxide film 5. A laser beam 6 is irradiated to the band- shaped polycrystal film 2 which is thereby made into a single crystal.</p> |
