发明名称 MANUFACTURE OF FINE SILICON CARBIDE POWDER
摘要 PURPOSE:To obtain directly fine silicon carbide powder by bringing suspended fine carbon powder obtd. by the thermal decomposition of hydrocarbon into contact with SiO at a specified temp. or above in a nonoxidizing atmosphere so as to make reaction proceed quickly. CONSTITUTION:A starting material for an SiO source such as a mixture of solid SiO or SiO2 with C is filled into a reactor, and a nonoxidizing gas such as H2 is fed while heating the material to >=1,400 deg.C to generate gaseous SiO. Gaseous hydrocarbon such as CH4 is separately fed to the reactor to produce carbon black by thermal decomposition, and this carbon black is brought into contact with said gaseous SiO to produce fine SiC powder by a reaction represented by an equation SiO+2C SiC+CO. When CH4 is used as the gaseous hydrocarbon, the molar ratio of CH4/H2 is adjusted to >=1/40, preferably 1/10-1/30.
申请公布号 JPS6090809(A) 申请公布日期 1985.05.22
申请号 JP19830197888 申请日期 1983.10.22
申请人 DENKI KAGAKU KOGYO KK 发明人 TSUCHIYA MICHIYO
分类号 C01B31/36 主分类号 C01B31/36
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