| 摘要 |
<p>1. A method for making an ingot of polycristalline semiconductor material, comprising successively, - a step of heating a crucible containing a sample of said semiconductor material, this crucible being disposed in a heat-insulated chamber, the heating permitting to obtain a bath of the melted material at a constant temperature which is higher than the melting point of said material, - a step of solidifying of said material, this solidifying being obtained by removing thermal energy at the bottom of the crucible, - and a step of gradually cooling the crucible, characterized in that, the heat-insulated chamber comprising a removable lower wall (5) covering the major part of the bottom (6) of the crucible (1), the thermal energy at the bottom of the crucible is removed by withdrawing said lower wall, the heating power being maintained at a constant level during the whole solidification step, this level being that which permits to obtain said constant temperature of the bath (18) at the end of the heating step.</p> |
