| 摘要 |
PURPOSE:To manufacture a high-quality GaAs crystal in good yield by gradually increasing the lifting speed of a crystal, and simultaneously elevating the surface temp. of the melt gradually to a specified temp. when the crystal grown to desired length is separated from the melt. CONSTITUTION:A seed crystal is brought into contact with the GaAs melt whose surface temp. is regulated to a temp. optimum for lifting up the crystal, and the single crystal is grown by a lifted liquid sealing lifting method. When the body of the crystal is grown to specified length and the growth is completed, the lifting speed of the crystal is gradually increased to >= about 3 times the speed when the body is formed. The surface temp. of the melt contacting with the crystal is simultaneously elevated gradually to a temp. 15 deg.C higher than the temp. when the body is grown. A rapid temp. change is not given to the crystal in this way, and an increase of dislocation can be suppressed. |
