RESISTIVE ELEMENT FORMED IN A SEMICONDUCTOR SUBSTRATE,申请号EP19820112097-传众专利搜索

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发明名称	RESISTIVE ELEMENT FORMED IN A SEMICONDUCTOR SUBSTRATE
摘要
申请公布号	EP0084178(A3)	申请公布日期	1985.05.22
申请号	EP19820112097	申请日期	1982.12.29
申请人	KABUSHIKI KAISHA TOSHIBA	发明人	MURAKAMI, KENJI C-203, TOSHIBA;HAYASHI, SEIJI
分类号	H01L29/8605;(IPC1-7):H01L27/08	主分类号	H01L29/8605
代理机构		代理人
主权项
地址

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