| 摘要 |
PURPOSE:To improve the adhesion strength to a base material by providing an interposing layer which consists of amorphous silicon, contains nitrogen and has prescribed nitrogen density and layer thickness between an amorphous silicon photoconductor and a base body. CONSTITUTION:An interposing layer 22 which consists of amorphous silicon and contains nitrogen is formed between an amorphous silicon photoconductor 23 and a base material 32. The nitrogen atom density of the interposing layer is >=5 atom% and the layer thickness of the interposing layer is 10-2,000Angstrom . A glow discharge method, electron beam method, sputtering method and ion plating method are possible as the method for forming the films for the interposing layer and photoconductive layer. Gaseous hydrogenated silicon is used for forming the interposing layer. |
