Integrated circuit comprising bipolar and field effect devices.

摘要

A bipolar lateral transistor is formed in a highly doped p-type well (13)the base contained in a lightly doped -type well (12) the collector in a very lightly doped p -type substrate (11). The arrangement is such that the boundary of the collector/base depletion region is distributed so that the non-depleted base region is wide below the emitter but very narrow at the surface. This defines a narrow active base region in the lateral emitter-collector path thus ensuring that the transistor operates predominantly in its lateral rather than its vertical mode.

The structure is compatible with conventional CMOS and NMOS processing techniques.