发明名称 Process for positioning an electrical contact hole between two interconnection lines of an integrated circuit
摘要 Process for positioning an electrical contact hole between a first and a second interconnection line of an integrated circuit. The first interconnection line is produced by depositing an insulating coating on the complete integrated circuit, depositing a first material coating on said insulating coating, etching the first material coating, defining the dimensions of the electrical contact hole by masking with resin, etching the insulating coating, eliminating the mask and the remaining first material coating. The second interconnection line is produced by depositing a conductive coating on the complete integrated circuit, on which is deposited a second material coating, which is etched, so as to only leave material at the locations of the electrical contact hole, followed by the deposition of a resin coating, etching the area of the conductive coating where there is neither resin nor the residual second material coating and eliminating the latter and the resin coating.
申请公布号 US4518629(A) 申请公布日期 1985.05.21
申请号 US19830559441 申请日期 1983.12.08
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 JEUCH, PIERRE
分类号 H01L21/768;(IPC1-7):H01L21/88 主分类号 H01L21/768
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