METHOD OF PRODUCING OVER SEMICONDUCTOR SURFACES A LAYER OF BORON,PHOSPHORUS,ARSENIUM OR GALLIUM CONTAINING SILICIUM COMPOUNDS BEING IN NO WAY POTENTIAL SOURCES OF BORON,PHOSPHORUS,ARSENIUM OR GALLIUM FOR THEIR DIFFUSION,申请号PL19830244619-传众专利搜索

发明名称	METHOD OF PRODUCING OVER SEMICONDUCTOR SURFACES A LAYER OF BORON,PHOSPHORUS,ARSENIUM OR GALLIUM CONTAINING SILICIUM COMPOUNDS BEING IN NO WAY POTENTIAL SOURCES OF BORON,PHOSPHORUS,ARSENIUM OR GALLIUM FOR THEIR DIFFUSION
摘要
申请公布号	PL244619(A1)	申请公布日期	1985.05.21
申请号	PL19830244619	申请日期	1983.11.15
申请人	POLITECHNIKA GDANSKA	发明人	JACZEWSKI MICHAL;LEWANDOWSKI DARIUSZ;PLOTKA PIOTR
分类号	C30B;C30B25/02;H01L21/205;(IPC1-7):C30B/	主分类号	C30B
代理机构		代理人
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