发明名称 PRODUCTION OF CHROMIUM MASK BLANK
摘要 <p>PURPOSE:To obtain a titled blank plate having excellent adhesion strength of a thin film by forming a light shieldable thin film of metallic chromium on a transparent substrate by a sputtering method with the metallic chromium as a target in an AR atmosphere contg. a specific volumetric ratio of N2. CONSTITUTION:A metallic chromium target and a transparent substrate are disposed to face each other in a sputtering device. The inside of the sputtering device is evacuated to a high vacuum and gaseous argon contg. 10-20% gaseous nitrogen by volume is introduced into said device. Sputtering is performed with the metallic chromium as a target to form a light shieldable thin film consisting essentially of the metallic chromium on the transparent substrate by which the intended chromium mask blank is obtd. The light shieldable thin film of the resulted chromium mask blank has excellent mechanical strength, etc. obviates drop-out of the thin film pattern during the process for manufacturing the mask or during the use of the mask and is substantially free from pinholing, etc.</p>
申请公布号 JPS6090336(A) 申请公布日期 1985.05.21
申请号 JP19830198574 申请日期 1983.10.24
申请人 TOPPAN INSATSU KK 发明人 TAIHICHI TAKEHIRO
分类号 C23C14/04;C23C14/06;C23C14/14;C23C14/22;C23C14/34;G03F1/00;G03F1/50;G03F1/54;G03F1/88;H01L21/027;H01L21/30 主分类号 C23C14/04
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