| 摘要 |
PURPOSE:To increase a film formation rate, to improve reproducibility and to equalize the quality of a film by introducing a compound containing silicon and halogen and an active seed into a film forming space, operating discharge energy to these substances, chemically reacting these substances and forming a deposit-film on a base body. CONSTITUTION:Discharge energy is worked to a compound containing silicon and halogen introduced into a film forming chamber 101 and an active seed, which is formed from a chemical substance for forming a film and activated in an activating space 123, under the coexistence of the compound and the active species. Chemical interaction by these substances is generated, promoted or amplified, thus enabling film formation by discharge energy lower than conventional devices. Accordingly, the film can be shaped at high speed, and reproducibility in film formation and film quality are improved, thus equalizing film quality while also enabling forming the film on a base body 103 hardly having heat resistance. |
