| 摘要 |
PURPOSE:To enable to accurately monitor the internal wiring condition of the title semiconductor device by a method wherein a groove part is provided on the circumference of a semiconductor chip when a semiconductor element is formed on the semiconductor chip, and a measuring pad is provided at both ends of the wiring which crosses the groove part. CONSTITUTION:An oxide film 2 is formed on the surface of a semiconductor layer 1. At this time, a patterning is performed on a nitride film mask in such a manner that an almost rectangular-shaped groove part 3 is formed on the surface of said oxide film 2. A wiring 4 to be used for checking is provided in such a manner that it crosses said groove part 3, and a measuring pad 5 is provided at both ends of the wiring 4. The stepping generated on the practical element located in the internal part is reproduced on the check pattern, and the check pattern is provided on the circumference of the semiconductor chip. Accordingly, the disconnection in stepped part of the wiring of the internal practical element can be checked by inspecting the presence or not of the disconnection in the stepped part of the wiring in the check pattern. |
