| 摘要 |
PURPOSE:To facilitate electrical insulation to the Si substrate by sequentially forming SiO2, silicide under the tungsten or molybdenum film. CONSTITUTION:After the tungsten film 1 is vacuum-deposited on a Si crystal substrate 2, this sample is heated up to a temperature ranging from 500 to 1,200 deg.C under the H2O ambient including H2O of 1ppm to 50%. Thereby, first tungsten W reacts with silicon Si and WSi2 film 4 is formed and then SiO2 film 3 is formed on the surface of film 4 by H2O in H2. Since W is not oxidized by H2+H2O, silicide and SiO2 are formed without oxidation of W. In case Mo is used in place of W, the same reactions are carried out. Thereby, a sufficient available insulation resistance for practical use can be obtained between the film 1 and film 4. Moreover, since W or Mo wiring is formed as the buried wiring, any protrusion and recess due to the wirings are not formed on the surface. |
