| 摘要 |
PURPOSE:To enhance controllability in the impurity region forming direction and efficiently obtain the gate region by implanting impurity element for forming the gate region from the surface of semiconductor layer and annealing such element by irradiation of electromagnetic wave of a longer wavelength light on the occasion of forming the gate region of electrostatic induction transistor which forms a solid state image pick-up device. CONSTITUTION:An n<-> type layer 12 is formed by the epitaxial growth method on an n<+> type Si substrate 10, the entire part thereof is covered with SiO2 film 26 and etching is carried out to the film 26 on the gate forming region 28 in order to make thin the thickness. The ion such as boron B<+> is implanted through the thin film 26 and the entire part is irradiated with the light 30 emitted from the halogen lamp through the predetermined mask for annealing. Thereby, the forming region 28 can be changed to the p<+> type gate region 16 and the gate region 18 surrounding said region 16. In this case, as the mask for forming the regions 16 and 18, two kinds of masks having different apertures are used for preventing lateral diffusion and thereby the orientation of regions 16 and 18 can be determined and thereafter an n<+> type source and drain region 14 are formed between such regions. |
