| 摘要 |
PURPOSE:To obtain a uniform film thickness, compensating the unbalanced distribution of film thickness which may be caused when gas flows in a single direction, by forming a film while switching the gas inlet and the outlet of a reaction chamber with the use of electromagnetic valves for reversing the gas flow. CONSTITUTION:An electrode plate 1 and a susceptor 3 having heaters 4 buried to be opposed to each other are arranged to be opposed to each other in the reaction chamber 2 of a plasma CVD unit. A glass substrate 5 is disposed on the susceptor 3. A multiplicity of apertures 6 and 7 are provided on both sides of the electrode plate 1 and of the susceptor 3, and gas conduits 8 and 9 are tightly inserted into each of the apertures 6 and 7, respectively. These conduits 8 and 9 are respectively branched into branch tubes 81, 82 and 91, 92 and the branch tubes 81 and 91 are connected with a gas conduit 15 through electromagnetic valves 11 and 12, respectively. The branch tubes 82 and 92 are connected with a gas conduit 16 through electromagnetic valves 14 and 13, respectively. The conduit 15 is connested to a reaction gas bomb 17, and the conduit 16 is connected to a discharge system 18. The gas inlet and outlet of the reaction chamber 2 are switched by means of the electromagnetic valves 11-14 so as to reverse the gas flow for forming a uniform thin film. |
