| 摘要 |
PURPOSE:To obtain a short channel IG FET having small junction capacity by forming a region which has the same conductive type as a semiconductor substrate and high impurity density more deeply than source and drain regions in a channel region disposed between the source and drain regions formed in the surface layer of the substrate. CONSTITUTION:A thick insulator separating field insulating film 8 is formed on the periphery of a semiconductor substrate 3, and a thin gate insulating film 7 is coated on the surface of the substrate 3 surrounded by the film 8. Then, ions are implanted through the film 7 to form source and drain regions 2 of different conductive type from the substrate 3, and a region 1 which has the same conductive type as the substrate 3 and high impurity density is formed more deeply than the region 2 in the region 4 between the regions 2. At this time the region 1 does not penetrate the source and drain junction due to the fact that the impurity density of the region 2 is high. Then, a gate electrode 6 is coated on the film 7 between the regions 2. |
