| 摘要 |
PURPOSE:To enable a smaller size while eliminating troubles for connection between an ion flow control electrode and a driving circuit by forming an ion flow control hole, the ion flow control electrode and the driving circuit on the same substrate. CONSTITUTION:An ion flow control hole 4 is formed on a substrate 15' such as silicon using etching technique. An upper control electrode 5, a lower control electrode 6 and a wire pattern 16 are formed by LSI technology and connected to a driving LSI17' formed on the same substrate 15'. As requiring several hundred V for controlling ion flow, the driving LSI17' is preferably prepared by dielectric separation. Thus, the formation of the driving circuit, ion flow control hole and ion flow control electrode on the same substrate reduces connections and minimizes troubles for mounting thereby facilitating a smaller size along with an easy replacement. |
