| 摘要 |
PURPOSE:To obtain a thin alloy film having a concn. gradient of the compsn. in the thickness direction with high accuracy by forming each of targets into a metal (alloy) having different compsn. by using an opposed target type sputtering method and transferring a substrate in the opposing direction of the targets. CONSTITUTION:A substrate 40 is held in the direction approximately perpendicular to sputtering surfaces T1s, T2s so as to face the space between targets T1 and T2 by using a device having the same constitution as the constitution of the conventional opposed target type sputtering method except the means for holding the substrate 40. The substrate 40 is therefore movable in the direction perpendicular to the surfaces T1s, T2s, i.e., the opposing directions of the targets T1, T2. After the inside of a vacuum vessel 10 is evacuated by an evacuating system 20, the inside is set under prescribed gaseous pressure by a gas introducing system 30 and electric power is supplied between the targets T1 and T2 by a means 50 for supplying electric power and sputtering is performed while the substrate 40 is transferred. The high-speed and low-temp. sputtering is thus accomplished and the intended thin alloy film is obtd. on the substrate 40. |
