| 摘要 |
<p>PURPOSE:To prevent thermal fatigue at adhered position due to thermal distortion without damaging heat radiation during operation by adhering a semiconductor substrate on a metal member using an alloy solder which has main elements of Al and Ge. CONSTITUTION:On a metal support plate 1, e.g., a copper plate 1 coated with Ni, an Si transistor TR2 is adhered with an alloy solder layer 3 consisting of Al and Ge. The coefficient of thermal expansion of the alloy solder has a nearly intermediate value between those of copper as the support plate 1 and Si as the main material of TR2 and has an effect of alleviating the difference of the coefficients of these two materials. The alloy solder has also greater mechanical strength and can easily realize a construction in which concentration of thermal stress on the layer 3 itself is avoided. The alloy solder has also smaller thermal resistance and is excellent in heat radiation.</p> |
