| 摘要 |
PURPOSE:To prevent generation of a slip line due to thermal stress even if a high temperature processing is adopted by forming two layers of a protective layer formed with SiO2 and a layer of polycrystalline Si on the main surface of a semiconductor substrate. CONSTITUTION:On the first main surface 6a and the second main surface 6b of an Si wafer 6, phosphorus is diffused and an N<+> diffusion layer 7 is formed. On the main surfaces 6a, 6b, an SiO2 film 9 is deposited. Then, a polycrystalline Si film 10 is deposited. On the other surface of the wafer 6, the layer 7 is removed by mirror polishing. After these processes, the back surface of the wafer 6 is gettered to reduce the internal defects of the wafer 6 and a heavy metal contamination, crystal defects, etc. induced during the manufacture. In this manufacture, a dual layer construction of the film 9 and the film 10 can prevent generation of a slip line due to thermal stress even a high temperature processing is used. |
