| 摘要 |
PURPOSE:To greatly simplify the process required to form the titled wiring being air-insulated by a method wherein a photo resist itself which can be easily treated by the process of photolithography is used as a spacer member. CONSTITUTION:A gate electrode 22, source electrodes 23, and a drain electrode 24 are formed on a GaAs substrate 20, and the negative type photo resist 27 is so provided as to cover a gate supply wiring 224. A thick film wiring 28 is formed by Au plating, a supply metallic film 29 being formed by evaporation, and a cross-over electrodes 31 being then formed by Au plating. The unnecessary part of the metallic film 29 is removed, and the photo resist layer 27 is removed with a release agent. resulting in the completion of an air cross-over structure wherein the wiring 224 and a cross-over electrode 32 are air-insulated. |
