| 摘要 |
PURPOSE:To obtain GaAs ICs of higher speed action by a method wherein a gate metal and a high concentration layer are formed in proximity on the source side, and the gap between the gate metal and the layer is allowed to have a suitable distance by an insulation film on the drain side. CONSTITUTION:An FET active layer 12 is formed in a semi-insulation GaAs substrate 11, and a heat-resistant insulation film 18 such as an SiO2 film or an SiN film is grown; thereafter, the insulation film is selectively removed so as not to exist on the side of forming the source region after the active layer is formed. Next, a heat-resistant metal such as WSi of Schottky contact with the active layer is adhered and then shaped into a gate metal 13 by photoetching. Further, the insulation film squeezed out of the gate metal is removed. Then, high concentration layers 14 and 15 are formed in self-alignment with the gate metal as a mask. Heat treatment is performed to activate ion implanted layers 12, 14, and 15. Finally, a source electrode 16 and a drain electrode 17 in low-resistant contact with the layers 14 and 15 are formed. |
